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Title: High depth resolution analysis of Si/SiGe multilayers with the atom probe
Authors: Koelling, Sebastian ×
Gilbert, Matthieu
Goossens, Jozefien
Hikavyy, Andriy
Richard, Olivier
Vandervorst, Wilfried #
Issue Date: Oct-2009
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:95 issue:14 pages:1-3
Article number: 144106
Abstract: The laser assisted atom probe has been proposed as a metrology tool for next generation semiconductor technologies requiring subnanometer depth resolution. In order to support its routine application, we carried out a quantitative assessment of the performance of the atom probe on semiconductor stacks. We analyzed a silicon, silicon-germanium multilayer-structure with atom-probe tomography (APT), secondary ion mass spectroscopy (SIMS), transmission electron microscopy (TEM), and high-resolution x-ray diffraction (HRXRD). We demonstrate that APT outperforms SIMS by a factor of 3 in terms of depth-resolution providing a decay length of 0.2-0.6 nm/decade whereas the compositions and layer thicknesses are in close agreement with SIMS, HRXRD, and TEM. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3243461]
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
× corresponding author
# (joint) last author

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