Title: Influence of Si precursor on Ge segregation during ultrathin Si reduced pressure chemical vapor deposition on Ge
Authors: Vincent, Benjamin ×
Vandervorst, Wilfried
Caymax, Matty
Loo, Roger #
Issue Date: Dec-2009
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:95 issue:26 pages:1-3
Article number: 262112
Abstract: This letter reports on the Ge segregation mechanism occurring during ultrathin (few monolayers) Si cap growth on Ge substrates by reduced pressure chemical vapor deposition. Thanks to extremely low energy secondary ion mass spectroscopy, we have highlighted that Ge segregation in Si-covered Ge does not depend on the growth temperature (in the 350-500 degrees C range) or on the carrier gas (H-2,N-2) used during Si growth. Solely the Si precursor used, i.e., the Si incorporation mechanism, impacts the Ge segregation rate. A multi-Ge segregation model is proposed, considering probabilities of sites exchanges in between all Si-Ge stacked atoms within the first nanometer of the layers.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
× corresponding author
# (joint) last author

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