Title: B profile alteration by annealing in reactive ambients
Authors: Pawlak, Bartek ×
Cowern, N. E. B
Vandervorst, Wilfried #
Issue Date: Jan-2009
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:94 issue:2 pages:1-3
Article number: 022104
Abstract: Suppression or stimulation of B diffusion and activation in Si (coimplanted with F) has been investigated by anneals in a N-2 ambient enriched with H-2 or O-2. The H-2 rich ambient leads to B desorption and therefore stimulated diffusion toward the surface, thus effectively reducing indiffusion. Annealing in an O-2 rich ambient promotes deeper B diffusion by injection of Si interstitials. The impact of these ambients can further be modulated by combining the B implant with a shallow or deep F coimplant acting as Si interstitial trap. Deep F coimplant and H-2 rich ambient offer attractive B diffusion and activation.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
× corresponding author
# (joint) last author

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