Title: On the dc and noise properties of the gate current in epitaxial Ge p-channel metal oxide semiconductor field effect transistors with TiN/TaN/HfO2/SiO2 gate stack
Authors: Maji, D ×
Crupi, F
Giusi, G
Pace, C
Simoen, Eddy
Claeys, Corneel
Rao, VR #
Issue Date: Apr-2008
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:92 issue:16
Article number: 163508
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

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