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Keywords:

Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Physics, Applied, Physics, Condensed Matter, Engineering, Physics, C shape, Temperature, Gate-induced floating body effect, SOI nMOSFETs, 0204 Condensed Matter Physics, 0205 Optical Physics, 0906 Electrical and Electronic Engineering, Applied Physics, 4009 Electronics, sensors and digital hardware, 5104 Condensed matter physics

Abstract:

The temperature influence on the gate-induced floating body effect (GIFBE) in fully depleted (FD) silicon-on-insulator (SOI) nMOSFETs is investigated, based on experimental results and two-dimensional numerical simulations. The GIFBE behavior will be evaluated taking into account the impact of carrier recombination and of the effective electric field mobility degradation on the second peak in the transconductance (gm). This floating body effect is also analyzed as a function of temperature. It is shown that the variation of the studied parameters with temperature results in a "C" shape of the threshold voltage corresponding with the second peak in the gm curve. © 2008 Elsevier Ltd. All rights reserved.