Title: In-situ passivation combined with GaN buffer optimization for extremely low current dispersion and low gate leakage in Si3N4/AlGaN/GaN HEMT devices on Si (111)
Authors: Germain, Marianne
Cheng, Kai
Derluyn, Joff
Degroote, Stefan
Das, Jo
Lorenz, Anne
Marcon, Denis
Van Hove, Marleen
Leys, Maarten
Borghs, Gustaaf
Issue Date: 2008
Publisher: Wiley-VCH
Host Document: Physica Status Solidi C vol:5 issue:6 pages:2010-2012
Conference: 7th International Conference on Nitride Semiconductors (ICNS-7) location:Las Vegas date:16-21 Sept 2007
ISSN: 1610-1634
Publication status: published
KU Leuven publication type: IC
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems

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