|ITEM METADATA RECORD
|Title: ||In-situ passivation combined with GaN buffer optimization for extremely low current dispersion and low gate leakage in Si3N4/AlGaN/GaN HEMT devices on Si (111)|
|Authors: ||Germain, Marianne|
Van Hove, Marleen
|Issue Date: ||2008 |
|Host Document: ||Physica Status Solidi C vol:5 issue:6 pages:2010-2012|
|Conference: ||7th International Conference on Nitride Semiconductors (ICNS-7) location:Las Vegas date:16-21 Sept 2007|
|Publication status: ||published|
|KU Leuven publication type: ||IC|
|Appears in Collections:||Associated Section of ESAT - INSYS, Integrated Systems|
|Files in This Item:
There are no files associated with this item.
Request a copy
All items in Lirias are protected by copyright, with all rights reserved.
© Web of science