Title: Tuning the Fermi Level of SiO2-Supported Single-Layer Graphene by Thermal Annealing
Authors: Nourbakhsh, Amirhasan ×
Cantoro, Mirco
Klekachev, Alexander
Clemente, F
Soree, B
van der Veen, M. H
Vosch, Tom
Stesmans, Andre
Sels, Bert
De Gendt, Stefan #
Issue Date: Apr-2010
Publisher: Amer chemical soc
Series Title: Journal of physical chemistry c vol:114 issue:15 pages:6894-6900
Abstract: The effects of thermal annealing in inert Ar gas atmosphere of SiO2-supported, exfoliated single-layer graphene are investigated in this work. A systematic, reproducible change in the electronic properties of graphene is observed after annealing. The most prominent Raman features in graphene, the G and 2D peaks, change in accord to what is expected in the case of hole doping. The results of electrical characterization performed on annealed, back-gated field-effect graphene devices show that the neutrality point voltage V-NP increases monotonically with the annealing temperature, confirming the occurrence of excess hole accumulation. No degradation of the structural properties of graphene is observed after annealing at temperatures as high as 400 degrees C. Thermal annealing of single-layer graphene in controlled Ar atmosphere can therefore be considered a technique to reproducibly modify the electronic structure of graphene by tuning its Fermi level.
ISSN: 1932-7447
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Centre for Surface Chemistry and Catalysis
Semiconductor Physics Section
Molecular Imaging and Photonics
Molecular Design and Synthesis
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science