Title: Insight into the aggravated lifetime reliability in advanced MOSFETs with strained-Si channels on SiGe strain-relaxed buffers due to self-heating
Authors: Agaiby, Rimoon ×
O'Neill, Anthony G
Olsen, Sarah H
Eneman, Geert
Verheyen, Peter
Loo, Roger
Claeys, Corneel #
Issue Date: Jun-2008
Publisher: Ieee-inst electrical electronics engineers inc
Series Title: Ieee transactions on electron devices vol:55 issue:6 pages:1568-1573
Abstract: This brief compares the quality of ultrathin SiON dielectrics of nMOSFETs grown on strained-Si layers with both thin and thick SiGe strain-relaxed buffers (SRBs). The gate leakage in the strained-Si samples is found to be temperature-dependent, suggesting that the leakage is dominated by trap-assisted tunneling. The aggravated temperature-dependent gate leakage, along with the issue of self-heating, is demonstrated to have devastating consequences on the long-term lifetime reliability of the devices. However, the thin SRB samples exhibit a 20x improvement in lifetime, compared with the thick SRB samples, due to the lower thermal resistance of the former. This brief demonstrates' the importance of reducing the device thermal resistance as power-dissipation levels continue to rise if lifetime-reliability requirements are to be met.
ISSN: 0018-9383
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

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