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Title: Effects of electron irradiation on SiGe devices
Authors: Ohyama, H ×
Nagano, T
Takakura, K
Motoki, M
Matsuo, K
Nakamura, H
Sawada, M
Kuboyama, S
Bargallo Gonzalez, Mireia
Simoen, Eddy
Eneman, Geert
Claeys, Cor #
Issue Date: Feb-2010
Publisher: Elsevier Sequoia
Series Title: Thin Solid Films vol:518 issue:9 pages:2517-2520
Conference: E-MRS date:Juni 2009
Abstract: The degradation and the recovery behavior of the device performance for SiGe diodes and p-MOSFETs irradiated by 2-MeV electrons are reported For diodes, it is noted that both the reverse and forward Current increase by irradiation An interesting observation is that the forward Current decreases after irradiation for a forward voltage larger than similar to 0.7 V This reduction can be explained by an increased resistivity of the Si Substrate The degradation recovers by thermal annealing after irradiation For a fluence of 1 x 10(15) e/cm(2), the diode performance almost recovers to the initial condition after 250 degrees C annealing For the transistors. after irradiation. a slight negative shift of the threshold voltage and a decrease of the drain current for input and output characteristics have been observed together with a decrease of hole mobility This is mainly due to the increase of the threshold voltage induced by positive charge trapping in the gate oxide. (c) 2009 Elsevier B.V. All rights reserved
URI: 
ISSN: 0040-6090
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

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