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Title: Extended-Defect Aspects of Ge-on-Si Materials and Devices
Authors: Simoen, Eddy ×
Eneman, Geert
Wang, Gang
Souriau, Laurent
Loo, Roger
Caymax, Matty
Claeys, Cor #
Issue Date: 2010
Publisher: Electrochemical Society
Series Title: Journal of the Electrochemical Society vol:157 issue:2 pages:R1-R5
Abstract: Extended-defect aspects of state-of-the-art Ge-on-Si materials and devices are discussed with an emphasis on the impact of postgrowth thermal budget on the structural and electrical epilayer characteristics. The observations on the annealed thick and thin epitaxial layers on Si can be explained based on a thermodynamic model for the minimum density of threading dislocations (TDs). For the present processing conditions, the leakage current of Ge complementary metal oxide semiconductor compatible p(+)n junctions becomes independent of the TD density at about 10(7) cm(-2).
ISSN: 0013-4651
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems
Department of Materials Engineering - miscellaneous
× corresponding author
# (joint) last author

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