Title: Electric field dependence of trap-assisted-tunneling current in strained SiGe source/drain junctions
Authors: Bargallo Gonzalez, Mireia ×
Simoen, Eddy
Vissouvanadin Soubaretty, Bertrand
Eneman, Geert
Verheyen, Peter
Loo, Roger
Claeys, Corneel #
Issue Date: Jun-2009
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:94 issue:23
Article number: 233507
Abstract: This paper evaluates the impact of the local electric field on the leakage current of strained Si1-xGex source/drain junctions. The difference in the SiGe and Si lattice constants creates a biaxial in-plane compressive stress in the epilayer and a tensile expansion on the top of the underlying silicon substrate. Current-voltage (I-V) and capacitance-voltage (C-V) measurements were employed to further investigate the stress-induced leakage current when field-assisted mechanisms such as trap-assisted-tunneling and band-to-band-tunneling are dominant, owing to the presence of high electric fields in the highly doped silicon depletion region.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems
Structural Mechanics Section
× corresponding author
# (joint) last author

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