Author:

Keywords:

curing, nanoindentation, dielectrics, low-k dielectric thin films, H2 plasma, mechanical properties, k-value, plasma cvd, silicon compounds, mechanical-properties, elastic-modulus, dielectric films, indentation, hardness, glasses, damage, load, Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Nanoscience & Nanotechnology, Physics, Applied, Engineering, Science & Technology - Other Topics, Physics, plasma CVD, MECHANICAL-PROPERTIES, ELASTIC-MODULUS, INDENTATION, HARDNESS, GLASSES, DAMAGE, LOAD, 0401 Atmospheric Sciences, 0901 Aerospace Engineering, 0912 Materials Engineering, Applied Physics, 4016 Materials engineering, 5104 Condensed matter physics

Abstract:

The effect of He/H-2 downstream plasma (DSP) on the mechanical properties of plasma enhanced chemical vapor deposition SiCOH low-k films was studied using nanoindentation (NI) with the continuous-stiffness measurement technique. Furthermore, the main requirements for reliable NI measurements on plasma-modified low-k films are discussed. The results show that the mechanical properties of these films are intimately linked with their porosity and that exposure to He/H-2 DSP causes a change in both the porosity and the mechanical properties of the films. This change is related to the removal of porogen residue formed during the ultraviolet curing of the low-k film.