Electrochemical and solid state letters vol:13 issue:2 pages:H39-H41
Three-dimensional (3D)-stacked Si chip architecture using Cu through-silicon vias can make microelectronic devices vulnerable to Cu contamination. In this article, 130 nm complementary metal oxide semiconductor devices were used to investigate back-side Cu contamination. Cu was deposited directly on the back side of thin wafers, which were further annealed at 350 degrees C. No prominent degradation was observed for key device parameters. A multilayer of Cu/SiO2 (400 nm)/Si was revealed by focused ion beam-scanning electron microscopy, and transmission electron microscopy. X-ray diffraction was conducted on a blank wafer to study the interaction between Cu and Si. The exceptional growth of silicon oxide at room temperature is explained by a partial reconstitution mechanism of the catalytic Cu3Si. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3269603] All rights reserved.