Title: Electrochemical deposition of Bi on GaAs(100)
Authors: Vereecken, Philippe ×
Searson, PC #
Issue Date: Nov-2001
Publisher: Electrochemical soc inc
Series Title: Journal of the electrochemical society vol:148 issue:11 pages:C733-C739
Abstract: The electrochemical deposition of bismuth on n-GaAs(100), n(+)-GaAs(100), and p-GaAs(100) from Bi(NO3)(3) solution is characterized by cyclic voltammetry and impedance measurements. Electron capture at the conduction band forms the rate-determining step in the reduction of Bi3+ at n-type GaAs. The morphology of the bismuth films is related to the deposition kinetics. The rectifying n-GaAs/Bi Schottky barrier formed on low-doped substrates prevents oxidation of bismuth, whereas tunneling through the space-charge layer allows anodic stripping of Bi on highly doped substrates. Under illumination, electroless deposition of Bi is observed on n-GaAs. Surface-state mediated hole injection is responsible for the slow deposition of Bi on p-GaAs in the dark. Photoassisted nucleation and subsequent growth in the dark results in the formation of continuous thin Bi films on p-GaAs. (C) 2001 The Electrochemical Society.
ISSN: 0013-4651
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Centre for Surface Chemistry and Catalysis
× corresponding author
# (joint) last author

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