|ITEM METADATA RECORD
|Title: ||High hole mobility SGOI substrates obtained by the Ge condensation technique|
|Authors: ||Souriau, L.|
Vandervorst, Wilfried #
|Issue Date: ||2008 |
|Host Document: ||ECS Transactions - SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices. vol:16 issue:10 pages:79-89|
|Conference: ||ECS Transactions location:Honolulu, HI, USA date:12-17 October 2008|
|Publication status: ||published|
|KU Leuven publication type: ||IC|
|Appears in Collections:||Nuclear and Radiation Physics Section|
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