ITEM METADATA RECORD
Title: High hole mobility SGOI substrates obtained by the Ge condensation technique
Authors: Souriau, L.
Nguyen, T.
Augendre, E.
Loo, R.
Terzieva, V.
Caymax, M.
Cristoloveanu, S.
Meuris, M.
Vandervorst, Wilfried #
Issue Date: 2008
Host Document: ECS Transactions - SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices. vol:16 issue:10 pages:79-89
Conference: ECS Transactions location:Honolulu, HI, USA date:12-17 October 2008
Publication status: published
KU Leuven publication type: IC
Appears in Collections:Nuclear and Radiation Physics Section
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy

 




All items in Lirias are protected by copyright, with all rights reserved.

© Web of science