Author:

Keywords:

dangling bonds, density functional theory, elemental semiconductors, germanium compounds, ge-si alloys, paramagnetic resonance, performance, ge, Science & Technology, Physical Sciences, Physics, Applied, Physics, Ge-Si alloys, PERFORMANCE, GE, 02 Physical Sciences, 09 Engineering, 10 Technology, Applied Physics, 40 Engineering, 51 Physical sciences

Abstract:

First-principles simulations have been used to investigate the electron spin resonance g-factors of Ge P-b0 and P-b1 dangling-bond centers of germanium rich SixGe(1-x)On alloys. The computed values and the relative orientation of the dangling bond orbital have been compared to experimental results, allowing for the identification of a Ge P-b1 type center at (100)SixGe(1-x)/SiO2 interfaces.