Title: Surface Defects and Passivation of Ge and III-V Interfaces
Authors: Houssa, Michel ×
Chagarov, Evgueni
Kummel, Andrew #
Issue Date: Jul-2009
Publisher: The Society
Series Title: MRS Bulletin vol:34 issue:7 pages:504-513
Abstract: The need for high-kappa gate dielectrics and metal gates in advanced integrated circuits has reopened the door to Ge and III-V compounds as potential replacements for silicon channels, offering the possibility to further increase the performances of complementary metal oxide semiconductor (CMOS) circuits, as well as adding new functionalities. Yet, a fundamental issue related to high-mobility channels in CMOS circuits is the electrical passivation of their interfaces (i.e., achieving a low density of interface defects) approaching state-of-the-art Si-based devices. Here we discuss promising approaches for the passivation of Ge and III-V compounds and highlight insights obtained by combining experimental characterization techniques with first-principles simulations.
ISSN: 0883-7694
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science