Title: First-principles study of the electronic properties of Ge dangling bonds at (100)Si1-xGex/SiO2 interfaces
Authors: Houssa, Michel ×
Afanas'ev, Valeri
Stesmans, Andre
Pourtois, G
Meuris, M
Heyns, Marc #
Issue Date: Oct-2009
Publisher: Amer inst physics
Series Title: Applied physics letters vol:95 issue:16
Article number: 162109
Abstract: First-principles calculations of the electronic properties of (100)Si1-xGex/SiO2 structures, with a Ge dangling bond at the interface, are reported. It is found that the defect level associated with this dangling bond approaches the valence band edge of the Si1-xGex substrate as the Si concentration is reduced, mainly due to the narrowing of the energy bandgap of the alloy. These results suggest that these dangling bonds likely behave as acceptor-type defects at Ge-rich (100)Si1-xGex interfaces. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3253707]
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
Department of Materials Engineering - miscellaneous
× corresponding author
# (joint) last author

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