Title: High electron mobility achieved in n-channel 4H-SiC MOSFETs oxidized in the presence of nitrogen
Authors: Zippelius, B ×
Beljakowa, S
Krieger, M
Pensl, G
Reshanov, S. A
Noborio, M
Kimoto, T
Afanas'ev, Valeri #
Issue Date: Oct-2009
Publisher: Wiley-v c h verlag gmbh
Series Title: Physica status solidi a-applications and materials science vol:206 issue:10 pages:2363-2373
Abstract: Two types of nitrided n-4H-SiC MOSFETs have been investigated; the p-type 4H-SiC epilayer is either oxidized in the presence of N2O or an N-/Al-co-implanted, surface-near layer is over-oxidized. The electrical parameters of these MOSFETs are determined and compared. We have investigated the temperature-dependence of the threshold voltage V-T and determined the effective mobility mu(eff) and the field effect mobility mu(FE) . Based on Hall effect measurements, we determined independently the free electron areal density n(s), the Hall mobility mu(H) and the differential Hall mobility mu(H,diff). The density of interface states D-it is obtained from the Hall effect, the temperature-dependent V-T and the conductance method. The stability of both types of MOSFETs is tested under stress (V-G = +/-25 V) at T = 295 K and T = 375 K. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
ISSN: 1862-6300
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science