Title: Band alignment and electron traps in Y2O3 layers on (100)Si
Authors: Wang, Wan-Chih ×
Badylevich, Mikhail
Afanas'ev, Valeri
Stesmans, Andre
Adelmann, C
Van Elshocht, S
Kittl, Jorge
Lukosius, M
Walczyk, Ch
Wenger, Ch #
Issue Date: Sep-2009
Publisher: Amer inst physics
Series Title: Applied physics letters vol:95 issue:13
Article number: 132903
Abstract: Y2O3 films deposited by atomic vapor deposition on (100)Si with a 2 or 5 nm thick pregrown thermal SiO2 are investigated as possible charge trapping layers. Analysis of these structures using spectroscopic ellipsometry, photoconductivity, and internal photoemission reveals that Y2O3 has a 5.6 eV wide optical bandgap and a 2.0 eV conduction band offset with silicon. Photo(dis)charging experiments show that the optical energy depth of most of the traps exceeds 1.5 eV with respect to the Y2O3 conduction band, explaining the observed charge retention time of similar to 10(8) s at room temperature, even in the absence of a blocking insulator. (C) 2009 American Institute of Physics. [doi:10.1063/1.3236536]
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
× corresponding author
# (joint) last author

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