Title: High-k Dielectrics and Metal Gates for Future Generation Memory Devices
Authors: Kittl, Jorge
Opsomer, K.
Popovici, M.
Menou, N.
Kaczer, B.
Wang, X.P.
Adelmann, C.
Pawlak, M.A.
Tomida, K.
Rotshild, A.
Govoreanu, B.
Degraeve, R.
Schaekers, M.
Zahid, M.
Delabie, Annelies
Meersschaut, J.
Polspoel, W.
Clima, S.
Pourtois, G.
Knaepen, W.
Detavernier, C.
Afanas'ev, Valeri
Blomberg, T.
Pierreux, D.
Swerts, J.
Fischer, P.
Maes, J.W.
Manger, D.
Vandervorst, Wilfried
Favia, P.
Bender, H.
Brijs, B.
Conard, T.
Van Elshocht, S.
Jurczak, M.
Van Houdt, J.
Wouters, D. J.
Issue Date: 2009
Publisher: Electrochemical Society Inc.
Host Document: Advanced gate stack, source/drain, and channel engineering for Si-based CMOS 5:New materials, processes, and equipment edition:ECS Transactions, vol. 19, No. 1 pages:29-40
Conference: International Symposium on Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-based CMOS location:San-Francisco date:24-29 May 2009
ISBN: 978-1-566777-09-4
Publication status: published
KU Leuven publication type: IHb
Appears in Collections:Semiconductor Physics Section
Nuclear and Radiation Physics Section

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