Title: Structural and electrical properties of HfO2/n-InxGa1-xAs structures (x=0, 0.15, 0.3 and 0.53)
Authors: Hurley, P.K.
O'Connor, E.
Monaghan, S.
Long, R.
O'Mahony, A.
Povey, I.M.
Cherkaoui, K.
MacHale, J.
Quinn, A.
Brammertz, G.
Heyns, Marc
Newcomb, S.
Afanas'ev, Valeri
Sonnet, A.
Galatage, R.
Jivani, N.
Vogel, E.
Wallace, R.M.
Pemble, M.
Issue Date: 2009
Publisher: Electrochemical Society Inc.
Host Document: Physics and technology of high-k gate dielectrics 7 edition:ECS Transactions vol. 25, No 6 pages:113-127
Conference: 2009 ECS Fall Meeting location:Vienna, Austria date:2-6 October 2009
ISBN: 978-1-566777-43-8
Publication status: published
KU Leuven publication type: IHb
Appears in Collections:Semiconductor Physics Section
Department of Materials Engineering - miscellaneous

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