Structural and electrical properties of HfO2/n-InxGa1-xAs structures (x=0, 0.15, 0.3 and 0.53)
Hurley, P.K. O'Connor, E. Monaghan, S. Long, R. O'Mahony, A. Povey, I.M. Cherkaoui, K. MacHale, J. Quinn, A. Brammertz, G. Heyns, Marc Newcomb, S. Afanas'ev, Valeri Sonnet, A. Galatage, R. Jivani, N. Vogel, E. Wallace, R.M. Pemble, M.
Electrochemical Society Inc.
Physics and technology of high-k gate dielectrics 7 edition:ECS Transactions vol. 25, No 6 pages:113-127
2009 ECS Fall Meeting location:Vienna, Austria date:2-6 October 2009