|ITEM METADATA RECORD
|Title: ||Electronic properties of Ge dangling bond centers at SiGe/SiO2 interfaces|
|Authors: ||Afanas'ev, Valeri|
Stesmans, Andre #
|Issue Date: ||2009 |
|Conference: ||Semiconductor Interface Specialists Conference edition:40th location:Washington DC, USA date:December 2009|
|Publication status: ||published|
|KU Leuven publication type: ||IMa|
|Appears in Collections:||Semiconductor Physics Section|
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