Title: Electronic properties of Ge dangling bond centers at SiGe/SiO2 interfaces
Authors: Afanas'ev, Valeri
Houssa, Michel
Stesmans, Andre #
Issue Date: 2009
Publisher: IEEE
Conference: Semiconductor Interface Specialists Conference edition:40th location:Washington DC, USA date:December 2009
Publication status: published
KU Leuven publication type: IMa
Appears in Collections:Semiconductor Physics Section
# (joint) last author

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