Title: Influence of Fin Width on the Total Dose Behavior of p-channel Bulk MuGFETs
Authors: Put, Sofie ×
Simoen, Eddy
Jurczak, Malgorzata
Van Uffelen, Marco
Leroux, Paul
Claeys, Corneel #
Issue Date: Mar-2010
Publisher: Institute of Electrical and Electronics Engineers
Series Title: IEEE Electron Device Letters vol:31 issue:3 pages:243-245
Abstract: A first assessment of the total dose behavior of bulk pMuGFETs is reported and special attention is given to the effect of the fin width on the radiation behavior. It was found that the effect of radiation-induced traps in the STI is larger when the fin width decreases. This is in contrast to the total dose behavior of SOI MuGFETs.
ISSN: 0741-3106
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors
Associated Section of ESAT - INSYS, Integrated Systems
Technologiecluster ESAT Elektrotechnische Engineering
Electrical Engineering (ESAT) TC, Technology Campus Geel
× corresponding author
# (joint) last author

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