IEEE Transactions on Nuclear Science vol:57 issue:4 pages:1771-1776
The gamma radiation-induced variation of the transconductance in the subthreshold region is studied for different back-gate voltages and for different kinds of SOI MuGFETs: devices with and without Selective Epitaxial Growth (SEG) and 45º rotated transistors. Wide fin devices show a larger degradation when the back-gate is grounded. The back-channel of narrow fin transistors, on the other hand, needs to be inverted before degradation in the transconductance is observed. The radiation behavior of the transconductance is similar for devices with and without SEG. It is shown that the maximum variation in transconductance correlates with the mobility for narrow fin devices. This mobility varies when the transistor is rotated. For wide fin devices this correlation is not as strong.