Title: Influence of back-gate bias and process conditions on the gamma-degradation of the transconductance of MuGFETs
Authors: Put, Sofie ×
Simoen, Eddy
Collaert, Nadine
De Keersgieter, An
Claeys, Corneel
Van Uffelen, Marco
Leroux, Paul #
Issue Date: Aug-2010
Publisher: Professional Technical Group on Nuclear Science
Series Title: IEEE Transactions on Nuclear Science vol:57 issue:4 pages:1771-1776
Abstract: The gamma radiation-induced variation of the transconductance in the subthreshold region is studied for different back-gate voltages and for different kinds of SOI MuGFETs: devices with and without Selective Epitaxial Growth (SEG) and 45º rotated transistors. Wide fin devices show a larger degradation when the back-gate is grounded. The back-channel of narrow fin transistors, on the other hand, needs to be inverted before degradation in the transconductance is observed. The radiation behavior of the transconductance is similar for devices with and without SEG. It is shown that the maximum variation in transconductance correlates with the mobility for narrow fin devices. This mobility varies when the transistor is rotated. For wide fin devices this correlation is not as strong.
ISSN: 0018-9499
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors
Associated Section of ESAT - INSYS, Integrated Systems
Technologiecluster ESAT Elektrotechnische Engineering
Electrical Engineering (ESAT) TC, Technology Campus Geel
× corresponding author
# (joint) last author

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