Title: Bipolar resistive electrical switching of silver tetracyanoquinodimethane based memory cells with dedicated silicon dioxide "switching layer"
Authors: Muller, R ×
Genoe, Jan
Heremans, Paul #
Issue Date: Sep-2009
Publisher: Amer inst physics
Series Title: Applied physics letters vol:95 issue:13
Article number: 133509
Abstract: We demonstrate reliable and durable (>100 write/erase cycles) bipolar resistive electrical switching of silver tetracyanoquinodimethane (AgTCNQ) based memories by incorporating a dedicated SiO2 "switching layer" and limiting the on state current by a current compliance. Switching back to the off state required voltages of opposite polarity with higher current intensity; keeping the same current compliance level typically prevented-and exceptionally lead to time delayed-off switching. Simultaneous growth and dissolution of the conductive channels could be observed during the on to off transition. All of these findings give further evidence that the switching mechanism involves electrochemical processes. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3242415]
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors
Electrical Engineering (ESAT) TC, Technology Campus Diepenbeek
Technologiecluster ESAT Elektrotechnische Engineering
× corresponding author
# (joint) last author

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