Title: Charge trapping in organic transistor memories: On the role of electrons and holes
Authors: Debucquoy, Maarten ×
Rockele, M
Genoe, Jan
Gelinck, G. H
Heremans, Paul #
Issue Date: Nov-2009
Publisher: Elsevier science bv
Series Title: Organic electronics vol:10 issue:7 pages:1252-1258
Abstract: In this work, we study charge trapping in organic transistor memories with a polymeric insulator as gate dielectric. We found that the mechanism of charge trapping is tunneling from the semiconductor channel into the gate dielectric. Depending on the semiconductor and its processing, charge trapping can result in large bi-directional threshold voltage shifts, in case the semiconductor is ambipolar, or in shifts in only one direction (unipolar semiconductor). These results indicate that optimal memory performance requires charge carriers of both polarities, because the most efficient method to lower the programming field is by overwriting a trapped charge by an injected charge of opposite polarity. (C) 2009 Elsevier B.V. All rights reserved.
ISSN: 1566-1199
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors
Associated Section of ESAT - INSYS, Integrated Systems
Electrical Engineering (ESAT) TC, Technology Campus Diepenbeek
Technologiecluster ESAT Elektrotechnische Engineering
× corresponding author
# (joint) last author

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