Title: A comprehensive model for bipolar electrical switching of CuTCNQ memories
Authors: Billen, J ×
Steudel, S
Muller, R
Genoe, Jan
Heremans, Paul #
Issue Date: Dec-2007
Publisher: Amer inst physics
Series Title: Applied physics letters vol:91 issue:26
Article number: 263507
Abstract: The generally observed bipolar electrical switching of Cu\CuTCNQ\metal memories (metal=Al,Yb,Ti) between two stable resistance states is shown to occur at the CuTCNQ\metal interface and not in the bulk of CuTCNQ. The switching is explained by a model involving electrochemical formation and dissolution of Cu filaments at the interface. In this mechanism, CuTCNQ acts as solid ionic conductor and source for the Cu+ cations. The model also explains earlier reported findings of bipolar switching in CuTCNQ devices, including the apparently contradictory observation that neutral TCNQ appears in the low-resistance state. (c) 2007 American Institute of Physics.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors
Electrical Engineering (ESAT) TC, Technology Campus Diepenbeek
Technologiecluster ESAT Elektrotechnische Engineering
× corresponding author
# (joint) last author

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