Title: Karakterisatie van grenslaagdefecten in Si/insulator-structuren met nm- dunne SiO2, Al2O3, ZrO2, en/of HfO2 lagen aan de hand van de AC- conductantie techniek
Other Titles: Characterization of interface traps in Si/insulator structures with nm- thick layers of SiO2, Al2O3, ZrO2,and HfO2 using the ac conductance technique.
Authors: Truong, Lien; M9931642
Issue Date: 21-Dec-2004
Publication status: published
KU Leuven publication type: TH
Appears in Collections:Semiconductor Physics Section

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