Materials for Advanced Microelectronics location:Dresden, Germany date:2-5 March 2008
We propose a method for evaluating the hydrophilisation degree of low-k films upon plasma damage. The evaluation is based on optical emission spectroscopy analysis of O* emission during He plasma exposure of sample in question. The O* is presumably desorbed from damaged low-k film by vacuum-ultraviolet radiation from He plasma. The new method correlates well with other methods for plasma damage characterization such as Fourier Transform Infrared Spectroscopy and Water-Vapor Ellipsometric Porosimetry. The presented method gives a unique opportunity to assess the degree of hydrophilisation of low-k films immediately after processing. (C) 2008 Elsevier B.V. All rights reserved.