Title: Effect of Porogen Residue on Chemical, Optical, and Mechanical Properties of CVD SiCOH Low-k Materials
Authors: Urbanowicz, Adam ×
Vanstreels, Kris
Shamiryan, Denis
De Gendt, Stefan
Baklanova, Mikhail R #
Issue Date: 2009
Publisher: Electrochemical soc inc
Series Title: Electrochemical and Solid-State Letters vol:12 issue:8 pages:H292-H295
Abstract: The effect of He/H-2 downstream plasma on chemical vapor deposition (CVD) low-k films with different porosities was studied. The results show that this plasma does not reduce the concentration of Si-CH3 bonds in the low-k matrix and that the films remain hydrophobic. However, mass loss and reduction in bulk C concentration were observed. The latter phenomena are related to the removal of porogen residue formed during the UV curing of the low-k films. It is demonstrated that the porogen residue removal changes the films' porosity and mechanical properties. The depth of the modification is limited by the penetration of H radicals into the porous low-k films.
ISSN: 1099-0062
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Molecular Design and Synthesis
× corresponding author
# (joint) last author

Files in This Item:
File Description Status SizeFormat
UrbanowiczECSL_PorogenResidue2009.pdf Published 496KbAdobe PDFView/Open


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science