Fe-57 diffusion in n-type Si after GeV implantation of Mn-57
Yoshida, Y × Kobayashi, Y Yukihira, K Hayakawa, K Suzuki, K Yoshida, A Ueno, H Yoshimi, A Shimada, K Nagae, D Asahi, K Langouche, Guido #
Physica B, Condensed Matter vol:401 pages:101-104
24th International Conference on Defects in Semiconductors (ICDS-24) edition:24 location:Albuquerque, New Mexico, USA date:22-27 July 20
At the RI-beam facility of the RIKEN, Mn-57/Fe-57 isotopes are separated and implanted into n-type FZ-Si (6 x 10(16) As/cm(3)), and subsequently the atomic jump processes of Fe-57 in the Si matrix are observed by Mossbauer spectroscopy on a time scale of 100 ns between 330 and 1200 K. The spectra consist of two components due to "interstitial Fe" and "substitutional Fe", both of which yield the same isomer shifts as those reported in p-type Si, showing long-range diffusion with increasing temperature. The spectra are compared with those simulated from a theoretical model. (C) 2007 Elsevier B.V. All rights reserved.