Title: Fe-57 diffusion in n-type Si after GeV implantation of Mn-57
Authors: Yoshida, Y ×
Kobayashi, Y
Yukihira, K
Hayakawa, K
Suzuki, K
Yoshida, A
Ueno, H
Yoshimi, A
Shimada, K
Nagae, D
Asahi, K
Langouche, Guido #
Issue Date: Dec-2007
Publisher: North-Holland
Series Title: Physica B, Condensed Matter vol:401 pages:101-104
Conference: 24th International Conference on Defects in Semiconductors (ICDS-24) edition:24 location:Albuquerque, New Mexico, USA date:22-27 July 20
Abstract: At the RI-beam facility of the RIKEN, Mn-57/Fe-57 isotopes are separated and implanted into n-type FZ-Si (6 x 10(16) As/cm(3)), and subsequently the atomic jump processes of Fe-57 in the Si matrix are observed by Mossbauer spectroscopy on a time scale of 100 ns between 330 and 1200 K. The spectra consist of two components due to "interstitial Fe" and "substitutional Fe", both of which yield the same isomer shifts as those reported in p-type Si, showing long-range diffusion with increasing temperature. The spectra are compared with those simulated from a theoretical model. (C) 2007 Elsevier B.V. All rights reserved.
ISSN: 0921-4526
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
× corresponding author
# (joint) last author

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