Title: Lattice location study of implanted In in Ge
Authors: Decoster, Stefan ×
de Vries, Bernard Lammert
Wahl, Ulrich
Correia, J. G
Vantomme, André #
Issue Date: Apr-2009
Publisher: Amer inst physics
Series Title: Journal of Applied Physics vol:105 issue:8
Article number: 083522
Abstract: We report on emission channeling experiments to determine the lattice location and the thermal stability of implanted In-111 atoms in Ge. The majority of the In atoms was found on the substitutional site, which is a thermally stable site at least up to 500 degrees C. We also found strong indication that directly after implantation, a fraction of the implanted In-111 atoms occupies the bond-centered (BC) site. This fraction disappears after annealing at 300 degrees C. From comparison with ab initio calculations, electrical studies, and perturbed angular correlation experiments, the In atoms on the BC site can be related to In-vacancy and In-self-interstitial defect complexes. The activation energy for dissociation of this BC related defect was found to be below 1.6 eV.
ISSN: 0021-8979
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
× corresponding author
# (joint) last author

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