Title: Nucleation and diffusion during growth of ternary Co1-xNixSi2 thin films studied by complementary techniques in real time
Authors: Smeets, Dries ×
Demeulemeester, Jelle
De Keyser, K
Deduytsche, D
Detavernier, C
Comrie, C. M
Theron, C. C
Lavoie, C
Vantomme, André #
Issue Date: Nov-2008
Publisher: Amer inst physics
Series Title: Journal of Applied Physics vol:104 issue:9 pages:1-11
Article number: 093533
Abstract: The growth kinetics of ternary Co1-xNixSi2 thin films was studied in real time. The "Kissinger" method was applied to the results of ramped sheet resistance measurements to extract the apparent activation energy for the growth process. By simultaneously acquiring sheet resistance, x-ray diffraction and laser light scattering data on one hand and combining resistance measurements and Rutherford backscattering spectrometry on the other hand, we could distinguish between the initial, nucleation controlled thin film growth, and the subsequent diffusion controlled growth. The apparent activation energy for the initial growth decreases with increasing Ni concentration as a result of a lower nucleation barrier for the ternary disilicide. The markedly different microstructure of the ternary Co1-xNixSi2 films with respect to pure CoSi2 layers lies at the origin of a lower activation energy for the diffusion controlled growth of the ternary films. Despite the low activation energy, these films grow at a much slower rate than CoSi2 films due to the large grain size and consequently lower density of grain boundary diffusion paths. These results explain the unexpected high thermal budget required for the formation of low resistivity Co1-xNixSi2 thin films. (c) 2008 American Institute of Physics. [DOI: 10.1063/1.3013449]
ISSN: 0021-8979
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
× corresponding author
# (joint) last author

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