Nuclear instruments & methods in physics research section b-beam interactions with materials and atoms vol:257 pages:169-171
IBMM edition:15 location:Taormina date:18-22 September 2006
Deep-level transient spectroscopy was used to investigate the electrically active defects introduced in n-type Ge during heavy-ion implantation of 160 keV ions. Various noble heavy-ions were used for implantation and the main defects introduced were found to be electron traps with energy levels at E-C - 0.09 eV, E-C - 0.15 eV and E-C - 0.30 eV. Another defect with a level at E-C - 0.38 eV, shown to be the E-center (V-Sb defect), is also present in a very low concentration. The main defects in heavy-ion implanted Ge are different from those introduced by MeV electron irradiation, where the main defect is the E-center. Since electron irradiation introduces mainly point defects, this indicates that heavy-ion implantation introduces defects of a more extended nature, such as vacancy and/or interstitial clusters and their combinations with impurities or foreign species in the Ge. We have also demonstrated that these defects are not species related. (C) 2007 Elsevier B.V. All rights reserved.