Title: Pt redistribution during Ni(Pt) silicide formation
Authors: Demeulemeester, Jelle ×
Smeets, D
Van Bockstael, C
Detavernier, C
Comrie, C. M
Barradas, N. P
Vieira, A
Vantomme, André #
Issue Date: Dec-2008
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:93 issue:26 pages:1-3
Article number: 261912
Abstract: We report on a real-time Rutherford backscattering spectrometry study of the erratic redistribution of Pt during Ni silicide formation in a solid phase reaction. The inhomogeneous Pt redistribution in Ni(Pt)Si films is a consequence of the low solubility of Pt in Ni2Si compared to NiSi and the limited mobility of Pt in NiSi. Pt further acts as a diffusion barrier and resides in the Ni2Si grain boundaries, significantly slowing down the Ni2Si and NiSi growth kinetics. Moreover, the observed incorporation of a large amount of Pt in the NiSi seeds indicates that Pt plays a major role in selecting the crystallographic orientation of these seeds and thus in the texture of the resulting Ni1-xPtxSi film.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
× corresponding author
# (joint) last author

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