Published by the American Physical Society through the American Institute of Physics
Physical Review B, Condensed Matter and Materials Physics vol:79 issue:3
The mechanisms of particle emission resulting from electron-beam-induced etching of Si surfaces have been studied. A detailed analysis of the obtained mass spectra and kinetic-energy distributions shows that SiFx (x=0-2) species are predominantly desorbed from the surface when exposed to XeF2 etching gas and the electron beam. Based on these observations, we demonstrate a unique concept for materials analysis, termed zero-energy secondary-ion mass spectrometry, which can provide very high depth resolution and accurate near-surface profiles.