Electrical Characterization of SrBi2Ta2O9 (SBT)/High-K Gate Stack in Metal-Ferroelectric-Insulator-Semiconductor Structure (Elektrische karakterisatie van SrBi2Ta2O9 (SBT)/hoge k gate stacks in Metaal-Ferroelectric-Isolator-Halfgeleiderstructuren)
Electrical Characterization of SrBi2Ta2O9 (SBT)/High-K Gate Stack in Metal-Ferroelectric-Insulator-Semiconductor Structure
Xu, Zhen; M0130859
Title of Ph.D thesis: ELECTRICAL CHARACTERIZATION OF SrBi2Ta2O9(SBT)/HIGH-K GATE STACK IN META L-FERROELECTRIC-INSULATOR-SEMICONDUCTOR STRUCTURE SUMMARY: Nonvolatile semiconductor memories are capable of storing data, even wit h the power turned off. In recent years, ferroelectric nonvolatile memories have received a lot of research attention. The ferroelec tric film gated memory transistor is in principle attractive due to the advantages of the non-destructive read out, the potential of cell scale- down, and the potential of fast reading. The understanding of the electrical behavior of ferroelectric gate stacks is critical for the pro cess development and appraisal. This Ph.D work is focusing on the electrical characterization of SrBi2Ta2O9 (SBT)/high-k gate stacks for f erroelectric memory application. Metal-Ferroelectric-Insulator-Sem iconductor (MFIS) structures using SBT/high-k gate stacks are investigat ed in this research, making use of the extensive research of high-k gate oxide in IMEC, the comparable mature SBT film deposition process in IME C, and the simplicity of the MFIS process.