Title: Boosting the on-current of a n-channel nanowire tunnel field-effect transistor by source material optimization
Authors: Verhulst, Anne ×
Vandenberghe, William
Maex, Karen
Groeseneken, Guido #
Issue Date: 26-Sep-2008
Publisher: American Institute of Physics
Series Title: Journal of Applied Physics vol:104 issue:6 pages:10p
Article number: 64514
Abstract: Tunnel field-effect transistors TFETs are potential successors of metal-oxide-semiconductor FETs
because of the absence of short-channel effects and of a subthreshold-slope limit. As a solution to
the low on-currents of silicon-based TFETs, the incorporation of silicon-germanium at the
source-channel interface has been considered. However, the understanding of the
band-to-band-tunneling mechanism at heterojunctions is incomplete. We have investigated through
device simulations and modeling the impact of source-material modifications on the tunnel current
in n-channel nanowire TFETs. Our modeling work includes the development of a semi-analytical
model, which determines the tunnel probability along the dominant tunnel path in two-dimensional
TFETs. In particular, we have analyzed the impact of the bandgap, electron affinity, effective mass,
dielectric constant, and density of states of both source and channel material. We show that a
small-bandgap source material and a large positive electron-affinity offset at the source-channel
interface boost the tunnel current of n-channel TFETs.
ISSN: 0021-8979
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors
Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

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