Title: Complementary Silicon-Based Heterostructure Tunnel-FETs With High Tunnel Rates
Authors: Verhulst, Anne ×
Vandenberghe, William
Maex, Karen
De Gendt, Stefan
Heyns, Marc
Groeseneken, Guido #
Issue Date: Dec-2008
Publisher: Ieee-inst electrical electronics engineers inc
Series Title: IEEE Electron Device Letters vol:29 issue:12 pages:1398-1401
Abstract: As a solution to the low on-current of silicon-based tunnel-FETs (TFETs), the source material of the n-channel TFET is replaced with the small-bandgap material germanium, which results in a current boost up to the same level as the current of MOSFETs. However, no solution has been reported to boost the on-current of the all-silicon p-TFET, a necessity for making an inverter and competing with the MOSFET. We have investigated the heterostructure TFET with respect to complementarity based on our semi-analytical model, and we propose the InxGa1-xAs-source silicon-TFET as p-TFET. This design is particularly applicable to nanowire-based transistor architectures. We discuss the complementarity of the I-V curves, and we analyze the threshold voltage behavior of the complementary TFETs.
ISSN: 0741-3106
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors
Associated Section of ESAT - INSYS, Integrated Systems
Molecular Design and Synthesis
Department of Materials Engineering - miscellaneous
× corresponding author
# (joint) last author

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