Title: A model of threading dislocation density in strain-relaxed Ge and GaAs epitaxial films on Si (100)
Authors: Wang, G. ×
Loo, R.
Simoen, E.
Souriau, L.
Caymax, M.
Heyns, Marc
Blanpain, Bart #
Issue Date: Mar-2009
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:94 issue:10 pages:102115
Abstract: Strain relaxation in large lattice-mismatched epitaxial films, such as Ge and III-V materials on Si, introduces high threading dislocation densities (TDDs). A thermodynamic model of TDD dependence on film thickness is developed. According to this model, the quasiequilibrium TDD of a given strain-relaxed film scales down with the inverse square of its thickness. The quasiequilibrium TDDs in both Ge and GaAs films follow this model consistently. Our model predicts the lowest possible TDD of a large lattice-mismatched film on Si (100), which is determined by the dislocation glide activation energy and the film thickness.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Chemical and Extractive Metallurgy Section (-)
Structural Mechanics Section
Department of Materials Engineering - miscellaneous
× corresponding author
# (joint) last author

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