Title: Cost effective low Vt Ni-FUSI CMOS on SiON by means of Al implant (pMOS) and Yb+P implant (nMOS)
Authors: Lauwers, A. ×
Veloso, A.
Chang, S.
Yu, H.
Hoffmann, T.
Kerner, C.
Demand, M.
Rothschild, A.
Niwa, M.
Satoru, I.
Mitshashi, R.
Ameen, M.
Whittemore, G.
Pawlak, M.
Vrancken, C.
Demeurisse, C.
Mertens, S.
Vandervorst, Wilfried
Absil, P.
Biesemans, S.
Kittl, Jorge #
Issue Date: Jan-2008
Publisher: Institute of Electrical and Electronics Engineers
Series Title: IEEE Electron Device Letters vol:29 issue:1 pages:34-37
ISSN: 0741-3106
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
× corresponding author
# (joint) last author

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