Title: Interface control of high-k gate dielectrics on Ge
Authors: Caymax, Matty ×
Houssa, Michel
Pourtois, Geoffrey
Bellenger, Florence
Martens, Koen
Delabie, Annelies
Van Elshocht, Sven #
Issue Date: Jul-2008
Publisher: New York
Series Title: Applied Surface Science vol:254 issue:19 pages:6094-6099
Conference: ISCSI-07 location:Sendai, Japan date:november 2007
Abstract: Important progress has been made in the passivation of Ge/gate dielectric interfaces. One important approach is by thermally oxidized GeO2 interface and ALD high-k layers, with an interface state density D-it similar to 2 x 10(11) cm(2) eV(1). Another approach is with an epi-Si/SiO2 interface, resulting in similar Dit. Hysteresis and V-th shift, however, are still not optimal. Extensive material characterization and theoretical insights help us understanding the root cause of these remaining issues and show the way to improved interface control. (c) 2008 Elsevier B.V. All rights reserved.
ISSN: 0169-4332
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
Electrical Engineering - miscellaneous
× corresponding author
# (joint) last author

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