Title: Electrically active traps at the 4H-SiC/SiO2 interface responsible to the limitation of the channel mobility
Authors: Bassler, M ×
Afanas'ev, Valeri
Pensl, G
Schulz, MJ #
Issue Date: 2000
Publisher: Trans Tech Publications
Series Title: Materials science forum vol:338 issue:2 pages:1065-1068
ISSN: 0255-5476
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
× corresponding author
# (joint) last author

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