Title: Electron energy band alignment at interfaces of (100)Ge with rare-earth oxide insulators
Authors: Afanas'ev, Valeri ×
Shamuilia, Sheron
Stesmans, Andre
Dimoulas, A.
Panayotatos, Y.
Sotiropoulos, A.
Houssa, Michel
Brunco, D. P. #
Issue Date: Mar-2006
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:88 issue:13 pages:1-3
Article number: 132111
Abstract: Energy diagrams of interfaces between (100)Ge and several rare-earth oxide insulators deposited from a molecular beam are determined using a combination of internal photoemission and photoconductivity measurements. For the wide band gap (5.9 eV) oxides Gd2O3 and LaHfOx, the band alignment at the interface is found to be close to that of HfO2 and is characterized by conduction/valence band offsets of similar to 2/similar to 3 eV. In contrast, CeO2 which has a much narrower band gap (3.3 eV) does not provide a band alignment diagram corresponding to sufficient insulation. (c) 2006 American Institute of Physics.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Department of Materials Engineering - miscellaneous
Semiconductor Physics Section
× corresponding author
# (joint) last author

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