Title: Ge MOSFETs and high-k gate dielectrics: a happy mariage thanks to thin epitaxial Si layers
Authors: Caymax, M
Leys, F
Dimoulas, A
Van Elshocht, S
Houssa, Michel
Delabie, Annelies
Kaczer, B
Bonzom, R
Vandervorst, Wilfried
Loo, R
Meuris, M
Heyns, Marc #
Issue Date: 2006
Conference: International Workshop on New Group IV Semiconductor Nanoelectronics edition:2d location:Sendai, Japan date:2-3 october 2006
Article number: Invited paper
Publication status: published
KU Leuven publication type: IC
Appears in Collections:Semiconductor Physics Section
Nuclear and Radiation Physics Section
Department of Materials Engineering - miscellaneous
# (joint) last author

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