ITEM METADATA RECORD
Title: Inherent point defects in biaxially tensile strined (100)Si/SiO2 probed by electron spin resonance
Authors: Stesmans, Andre ×
Somers, Pieter
Afanas'ev, Valeri
Claeys, Corneel
Simoen, E. #
Issue Date: Dec-2006
Publisher: Elsevier Sequoia
Series Title: Materials Science and Engineering B, Solid-State Materials for Advanced Technology vol:135 issue:3 pages:195-198
Abstract: Electron spin resonance studies are reported on (100)Si/SiO2 entities grown by thermal oxidation of biaxial tensile strained-(100)Si layers epitaxially grown on relaxed virtual substrates, with main focus on P-b-type interface defects, in particularly the electrically detrimental P-b0 variant. In the as-grown state a significant decrease (> 50%) in interface defect density compared to the standard (100)Si/SiO2 interface was observed. As compared to the latter, this inherent decrease in electrically active interface trap density establishes strained Si/SiO2 as a superior device entity for all electrical properties in which (near) interface traps may play a detrimental role. For one, it may be an additional reason for the commonly reported mobility enhancement in strained silicon inversion layers and the reduction in 1/f noise. The data also confirm the admitted relationship between inherent incorporation of the P-b related interface defects and the Si/SiO2 interface mismatch. (c) 2006 Elsevier B.V. All rights reserved.
URI: 
ISSN: 0921-5107
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy

 




All items in Lirias are protected by copyright, with all rights reserved.

© Web of science