Title: Germanium FETs and capacitors with rare earth CeO2/HfO2 gates
Authors: Dimoulas, A ×
Panayiotatos, Y
Sotiropoulos, A
Tsipas, P
Brunco, D. P
Nicholas, G
Van Steenbergen, J
Bellenger, Florence
Houssa, Michel
Caymax, M
Meuris, M #
Issue Date: Nov-2007
Publisher: Pergamon Press
Series Title: Solid-State Electronics vol:51 issue:11-12 pages:1508-1514
Abstract: Long channel Ge FETs and capacitors with CeO2/HfO2/TiN gates were fabricated by photolithography and gate wet etch. Rare earth CeO2 in direct contact with Ge was used as a passivating layer producing lowest D-it values in the mid 10(11) eV(-1) cm(-2) range. HfO2 cap reduces leakage and improves equivalent oxide thickness scaling of the whole gate stack. The p-FETs show exceptionally high I-ON/I-OFF ratio similar to 10(6), mainly due to low OFF current, and peak channel mobility around 80cm(2)/V s. The n-FETs, although functional, show inferior performance producing ON currents an order of magnitude lower compared to p-FETs. (C) 2007 Elsevier Ltd. All rights reserved.
ISSN: 0038-1101
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
× corresponding author
# (joint) last author

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