Title: Investigation of the electronic structure at interfaces of crystalline and amorphous Gd2O3 thin layers with silicon substrates of different orientation
Authors: Badylevich, Mikhail ×
Shamuilia, Sheron
Afanas'ev, Valeri
Stesmans, Andre
Laha, A.
Osten, H. J.
Fissel, A. #
Issue Date: Jun-2007
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:90 issue:25 pages:1-3
Article number: 252101
Abstract: Internal photoemission, photoconductivity, and spectroscopic ellipsometry experiments were carried out to characterize the electronic structure of interfaces of (001) and (111)-oriented Si with crystalline (epitaxially grown) and amorphous Gd2O3 insulators. The energy barriers for electrons and holes (3.2 and 3.9 eV, respectively) appear to be sensitive neither to the orientation of the Si crystal surface nor to the oxide phase (crystalline or amorphous). This result indicates that despite the difference in Si-O bond density in going from (001) to (111)Si, the interface dipoles do not ensue any measurable effect on the electronic structure of the interface and the associated band offsets. (c) 2007 American Institute of Physics.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Department of Materials Engineering - miscellaneous
Semiconductor Physics Section
× corresponding author
# (joint) last author

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