Title: Mechanism of Si island retention in buried SiO2 layers formed by oxygen ion implantation
Authors: Afanas'ev, Valeri ×
Stesmans, Andre
Revesz, A. G.
Hughes, H. L. #
Issue Date: 1997
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:71 pages:2106-2108
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
× corresponding author
# (joint) last author

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